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    DPG10I300PA 0 100 200 300 400 500 20 40 60 80 04080120160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ [°C] 0 100 200 300 400 500 0 2 VFR 4 6 8 10 12 0 100 200 t300fr [ns] 400 500 600 VFR [V] 0 100 200 300 400 500 0 2 4 6 8 10 12 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.0 0.4 0.8 1.2 1.6 2.0 0 5 [A] 10 F 15 20 25 30 IRR [A] Qrr [μC] I VF [V] -diF/dt [A/μs] trr [ns] tfr IRR Qrr -diF/dt [A/μs] TVJ= 125°C VR =200 V -diF/dt [A/μs] 5 A 10 A TVJ=125°C VR = 200 V -diF/dt [A/μs] 0.001 0.01 0.1 1 10 0 1 2 3 t[s] ZthJH [K/W] 0 100 200 300 400 500 0 2 J] 4 6 8 10 Erec [μ -diF/dt [A/μs] TVJ =25°C 125°C 150°C Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qrr versus -diF/dt Fig. 3 Typ. reverse recov. current IRR versus -diF/dt Fig. 4 Typ. dynamic parameters Qrr,IRR versus TVJ Fig. 5 Typ. reverse recov. time trrversus -diF/dt Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF/dt Fig. 7 Typ. recovery energy Erec versus -diF/dt Fig. 8 Transient thermal resistance junction to case TVJ=125°C VR =200V IF = 20 A TVJ=125°C VR = 200 V 20 A 10 A 5 A 20 A 10 A 5A TVJ=125°C I F = 10 A VR = 200 V IF = 5 A 10 A 20 A Rthi [K/W] 0.3866 0.7062 0.8127 0.3945 ti [s] 0.0004 0.0025 0.022 0.13 Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131125a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |